Start of funding 01.07.2010 | ||
Attosecond lightwave control of collective electronic motion in nanoscaled metal/III-V semiconductor heterostructures with ultrashort phase-sable laser pulses | ||
Prof. Dr. Reinhard Kienberger
Tim Paasch-Colberg
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Dr. Stefano Cabrini
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Recent technological developments in the field of ultrafast lasers enabled the generation of intense, phase-controlled few-cycle pulses in the near-infrared (NIR) that can produce ultraviolet (UV) pulses with durations of the order of a few femtoseconds by means of third-harmonic generation in rare gases. Here we aim at exploiting these few-cycle optical fields to generate and control the motion of charge carriers in nanoscaled AlGaN/GaN heterostructures, where a few-femtosecond UV pulse is intended to populate the semiconductor conduction band via a one-photon absorption process, and a synchronized CEP-stable few-cycle NIR laser will serve as the driving electric field imprinting a net momentum change to the generated carriers. Such achievements would represent the realization of ultrafast lightwave electronics. |
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Final report:
The aim of this project was the development of nanoscaled metal/III-V semiconductor heterostructures at the Molecular Foundry of the Lawrence Berkeley National Lab in Berkeley, California. A nanofabrication process has been developed that includes electron-beam lithography and reactive-ion etching of a gallium nitride (GaN) substrate. In a second step, pairs of gold (Au) electrodes were deposited by electron beam physical vapor deposition on top of the etched GaN surface. Here, a minimal distance of about 50 nm between the individual electrodes was achieved. | |
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